Type Designator: 2SD1047
Material of Transistor: Si
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 210 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Capable of being mounted easily because of one point fixing type plastic molded package (Interchangeable with TO-3).
• Wide ASO because of built-in ballast resistance.
• Good dependence of fT on current and good HF
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