Type Designator: BD139
Material of Transistor: Si
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
BD139 is a popular NPN transistor used in wide variety of electronic circuits, due to its high collector current and low cost it is an ideal transistor to be used in educational electronic projects and also in commercial electronics.
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